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Datasheet File OCR Text: |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO 92 C2611 FEATURES Power dissipation PCM : 0.75 Collector current ICM : 0.2 TRANSISTORNPN (c) W Tamb=25ae(c) A 1. BASE 2.COLLECTOR Collector-base voltage V(BR)CBO : 600 3. EMITTER 123 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10mA VCE= 20 V, I =20mA C Transition frequency 5 0.5 1.2 V V unless Test otherwise MIN specified(c) TYP MAX UNIT V V V 100 200 100 |I A |I A |I A conditions Ic= 100|I =0 A IE IC= 1 mA , IB=0 600 400 7 IE= 100 |I IC=0 A VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , VCE= 20 IC=0 V, IC= 20m A 10 40 f T 8 MHz f = 1MHz Fall time Storage time t f IC=50mA, IB1=-IB2=5mA, VCC=45V 0.3 1.5 |I s |I s tS CLASSIFICATION OF h FE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
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